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| BAS 28W Silicon Switching Diode Array * For high-speed switching applications * Electrical insulated diodes 3 4 2 1 VPS05605 Type BAS 28W Marking Ordering Code JTs Q62702-A3466 Pin Configuration Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 s Total power dissipation, T S = 103 C Junction temperature Storage temperature Symbol Value 75 85 200 4.5 250 150 - 65 ...+150 mA A mW C Unit V VR VRM IF I FS Ptot Tj T stg Thermal Resistance Junction - ambient 1) RthJA RthJS 460 190 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Mar-16-1998 1998-11-01 BAS 28W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) VF 85 V mV I (BR) = 10 A Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 1 A IR IR - VR = 75 V Reverse current VR = 25 V, TA = 150 C VR = 75 V, TA = 150 C AC characteristics Diode capacitance - - 30 50 CD trr - - 2 6 pF ns VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 , measured at IR = 1mA Test circuit for reverse recovery time D.U.T. F Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50 Oscillograph: R = 50, tr = 0.35ns, C 1pF Semiconductor Group Semiconductor Group 22 Mar-16-1998 1998-11-01 BAS 28W Forward current IF = f (TA*;TS) * Package mounted on epoxy Forward current IF = f V F) TA = 25C BAS 28 EHB00035 300 5 150 F mA mA 200 IF TS 150 100 typ max TA 100 50 50 0 0 20 40 60 80 100 120 C 150 0 0 0.5 1.0 V 1.5 TA,TS VF Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 K/W IFmax / IFDC - RthJS 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Mar-16-1998 1998-11-01 BAS 28W Forward voltage V F = f (TA) Reverse current IR = f (TA) 1.0 V BAS 28 EHB00037 10 nA 5 BAS 28 EHB00034 VF F = 100 mA R 10 4 V R = 70 V 10 mA 1 mA 0.1 mA 5 max. 70 V 0.5 10 5 3 25 V 10 2 5 typ. 0 0 50 100 C 150 10 1 0 50 100 C 150 TA TA Semiconductor Group Semiconductor Group 44 Mar-16-1998 1998-11-01 |
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